Amplifier Design Using a Λ / 4 High Impedance Bias Line with a Defected
نویسندگان
چکیده
YONG-CHAE JEONG Chonbuk National University Chonju, Korea SI-GYUN JEONG Samsung Electronics Gyeonggi-Do, Korea JONG-SIK LIM Korean Intellectual Property Office (KIPO) Daejeon, Korea CHUL-DONG KIM Sewon Teletech Inc. Kyeonggi-Do, Korea Recently, extensive research efforts on photonic band gap (PBG) structures where periodic patterns are etched on the ground plane of microstrip lines have been conducted for microwave circuit applications.1–4 The applications of PBG for power amplifiers, filters and mixers have been reported. A defected ground structure (DGS), which is realized by etching a few dumbbell shaped patterns in the ground plane of microstrip lines, has been proposed.5 Several applications to the design of directional couplers, filters and power amplifiers using DGS have been already reported.6–8 It is expected that DGSs can be applied effectively in microwave circuits to utilize their advantages over conventional PBGs. AMPLIFIER DESIGN USING A λ/4 HIGH IMPEDANCE BIAS LINE WITH A DEFECTED GROUND STRUCTURE (DGS)
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